New structures for carrier-controlled ferromagnetism in Cd/sub 1-x/Mn/sub x/Te quantum wells

The ability to control the properties of magnetic materials would be highly desirable from fundamental and technological viewpoints, particularly in view of recent developments in magneto-electronics and spintronics. Diluted magnetic semiconductors (D.M.S), where ferromagnetic interactions are mediated through the carriers, are particularly attracting materials since they offer the possibility to modulate the magnetic properties by modulating the carrier density. The first demonstration has been performed with III-V D.M.S layers inserted in a Schottky diode.