Enhanced IGBT self clamped inductive switching (SCIS) capability through vertical doping profile and cell optimization

In this paper, we analyze the impact of cell and vertical structure design to enhance the energy handling capability of the IGBT used in automotive ignition applications. The self-clamped inductive switching (SCIS) capability of the IGBT is presented both experimentally and through non-isothermal two-dimensional numerical simulations. It is shown that the SCIS energy density capability can be increased by up to 35% by optimization of the cell and vertical structure.