24 m/spl Omega/cm/sup 2/ 680 V silicon superjunction MOSFET

A silicon superjunction MOSFET with very low specific on-resistance, R/sub on/A, and very low R/sub on/Q/sub gd/, where Q/sub gd/ is the gate-to-drain switching charge, is reported. R/sub on/A and R/sub on/Q/sub gd/ achieved are 24 m/spl Omega/cm/sup 2/ and 2.0 /spl Omega/nC at the breakdown voltage of 680 V, which are the lowest among the reported values for high-voltage silicon power MOSFETs with breakdown voltage above 500 V. Numerical analysis and discussions on the design of the buried epitaxial superjunction technology are also presented.