Highly reliable LDMOSFETs employing uneven racetrack sources for PDP driver applications

The electrical characteristics of n-LDMOSFETs with uneven racetrack source (URS) and conventional racetrack source (CRS) before and after electrical DC stress were investigated to improve hot carrier immunity for PDP driver. The breakdown voltage of n-LDMOSFET with URS is improved by 15% as compared to that of n-LDMOSFET with CRS at on-state. The decrease of threshold voltage (V/sub t/) and maximum transconductance (g/sub mmax/) of n-LDMOSFET with URS after electrical DC stress are about 10 times lower than those of n-LDMOSFET with CRS. The variation of specific on-resistance (R/sub on/) of n-LDMOSFET with URS after DC stress is much lower than that of n-LDMOSFET with CRS.