4H-SiC npn bipolar junction transistors with BV/sub CEO/ > 3,200 V

4H-SiC BJTs with 1.05 mm/sup 2/ and 0.0072 mm/sup 2/ active areas are fabricated. Large devices show specific on-state resistance R/sub ON,SP/ of 78 m/spl Omega/-cm/sup 2/, common emitter current gain /spl beta/ of 15, and open-base blocking voltage BV/sub CEO/ > 3,200 V at room temperature. Small devices have /spl beta/ around 20, and R/sub ON,SP/ of 28 m/spl Omega/-cm/sup 2/. R/sub ON,SP/ increases with temperature while /spl beta/ decreases. /spl beta/ also decreases as the spacing between base contact implant and emitter finger is reduced. We attribute this to recombination in the p+ implanted base contact at implant-induced defect sites.