A simple and accurate method for extracting substrate resistance of RF MOSFETs

In this paper, a simple and accurate method was proposed for extracting substrate resistance of an RF MOSFET, the substrate of which is represented by a single resistor. The extraction results from the measured network parameters are presented for various bias conditions. Excellent agreement between the results of measurements and the model for the extracted substrate resistance was obtained up to 18 GHz. Also, the resistance extracted using the proposed method was shown to give scalable results.