A novel geometry for circular series connected multilevel inductors for CMOS RF integrated circuits

The scope of this brief is to introduce a novel geometry for circular series connected multilevel inductors. The idea is to improve the overlapping of the different metal layers that form the integrated inductor to maximize the magnetic flux shared by them and so the inductance. The performance of this new geometry has been compared with the conventional one, using Agilent HFSS field solver. After that, two multilevel inductors using this new geometry have been fabricated in a standard 0.6 /spl mu/m three-metal CMOS process and measured.