Comparison of total dose effects on micropower op-amps: bipolar and CMOS

Micropower op-amps; bipolar and CMOS, from Burr-Brown and Maxim are compared and critical parameters are characterized for total dose response with a 2.7 V power supply voltage. The Burr-Brown bipolar device showed much more degradation than the CMOS device at high dose rate. The results are also compared with a NSC CMOS device. The Maxim bipolar device showed enhanced low dose rate effects.