Novel SOI-Specific circuit form high-speed radiation-hardened memories

In all of th seven main memory components, the use of the novel SOI-specific sense amplifiers, memory-cells, and logic gates, envinced exceptionally speedy operations (Figure 6). This made possible fabrication and tests of complete memories which feature 2.2 GHz operational speed (Figure 7), 10
^−l2
error/bit/day and 1 Mrad total dose hardness. The SOI memories can indeed provide substantially faster operations than their best bulk counterparts do [2].