Enhancement of Current Carrying Capability in MOD-Processed YBCO Films Using Chemical Doping

Many efforts have been made to improve the current carrying capability of Y
₁
Ba
₂
Cu
₃
O
₇
(YBCO) films by introducing pinning centers using a variety of techniques. In this study, we have succeeded in producing Y
₂
O
₃
, BaZrO
₃
and Sm doped YBCO films for the development of coated conductors by a metal-organic deposition method using trifluoroacetates (TFA-MOD). Jc exceeding 5 MA /cm
²
at 77 K and self field was obtained in Y
₂
O
₃
doped YBCO film. Also it was found that YBCO films with Sm substituting for Y have shown an improved critical current density characteristic over a wide range of magnetic fields. A Jc of 0.25 MA/cm
²
at 3 T and 77 K was obtained which is more than 10% of the zero-field Jc. Similar results were obtained in BaZrO
₃
doped YBCO films. Additionally, TEM analysis was performed to study the microstructures and the pinning mechanisms. The results indicate that significant enhancement of self-field and in-field Jc of Y
₂
O
₃
, BaZrO
₃
and Sm doped YBCO films may be due to introducing nano-scaled Y
₂
O
₃
particles, nano-scaled 90deg rotated Y
_1/3
Sm
_2/3
Ba
₂
Cu
₃
O
₇
domains and BaZrO
₃
nanodots by different chemical doping, respectively. This indicates that chemical doping is a promising approach for enhancement of current carrying capability of YBCO coated conductors.