Ni2P Contact Technology for 300 mm Si Photonics Platform

In order to assess their potential use as contact layers for Si photonics devices, Ni
2
P thin films were developed on a 300 mm platform. Ni
2
P layers, obtained by magnetron sputtering of a Ni
2
P target, were implemented and integrated on III-V-based structures to extract the contact resistivity on n-InP and p-InGaAs. Due to its high thermal stability and low contact resistivities, Ni
2
P metallization exhibited the best results among the Ni-based metallizations studied for contacting n-InP layers.