Advanced contact technology for InGaAs NMOS and Ge PMOS devices

It has foreseen that future complementary metal-oxide-semiconductor (CMOS) devices are essentially prepared utilizing Ge/III–V group compound materials owing to their high-mobility properties and low effective mass. However, there are many key issues to be addressed before realizing Ge/III–V-based CMOS devices. One such problem is the making of source/drain (S/D) contacts with low resistivity. In this report, we address this issue by designing self-aligned contacts on Ge/III–V materials. The technologies include low-resistance S/D formation using Rare Earth Metals (RMEs) as an interlayer in self-aligned contacts. We focus on Ni-Ge and Ni-InGaAs contacts by investigating various process parameters and present status of our results.