Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga2O3

Gallium oxide (Ga 2 O 3 ) is one of the ultra-wide-bandgap (UWBG) semiconductors suitable for power-device applications [ 1 – 7 ]. Ion implantation and activation annealing are important processes to create an ideal local carrier distribution in the device. N-type regions have been successfully fabricated using Si-ion and other group-IV-ion implantations [ 8 – 15 ]. However, ion implantation generates the crystal defects through the interaction between the implanted atoms and the lattice. Activation annealing can be used to activate dopant atoms and eliminate the generated defects; however, such annealing may also diffuse the dopant atoms and has the possibility of causing the point defects to diffuse and evolve [12 , 14 , 16 , 17] . The transformation of defects may affect the free-carrier distribution and mobility and change the device characteristics accordingly.