An Active Gate Driver for Dynamic Current Sharing of Paralleled SiC MOSFETs

Due to the power limitation of single chip SiC MOSFET, the parallel operation of silicon carbide (SiC) MOSFETs is necessary for high power applications. However, the unbalanced current will cause potential safety and reliability risk. This paper proposes a new active gate drive (AGD) circuit to solve the dynamic unbalanced current problem. Compared with the existing current sharing scheme, this method can adjust the dynamic current distribution in real time and improve the dynamic current sharing among the devices. The experimental results verify the effectiveness of the proposed AGD.