Study of low temperature processing of HfO2 thin films deposited by rf magnetron sputtering for flexible thin film transistors

Hafnium oxide films have elicited interest in the field-effect transistors because of the high dielectric constant, high band gap and the good interface with oxide semiconductors. In this work, sputtered deposition and post-annealing of hafnium oxide films were studied for reduction of defects at the surface of gate dielectric. AFM and FTIR characterization of the films were conducted. A Metal-Insulator-Metal device was demonstrated for the identification of the capacitance of gate dielectric. The effect of the material properties on the performance of field -effect transistors were investigated.