InP/AlGaAs Based CSDG MOSFET With Au/Pt Gate Materials for High Frequency/Hybrid Applications

Aluminium Gallium Arsenide (A1
x
Ga
1
-
x
As- Arbitrary Alloy) is a material used in the latest high-frequency devices for the advantages of the lesser band-gap and also optimal electron mobility coefficient. The value of resistance between the source and drain in the A1
x
Ga
1
-
x
As material is lesser than other material that makes the Indium Phosphide (InP) material most suitable to grow contacts on the Aluminium Gallium Arsenide (AIGaAs). These materials will have a very low thermal budget as it is mainly based on the ion implantation model for designing. Re-grown contacts like drain and source have serious issues such as higher parasitic capacitances, which need utmost care while designing the MOSFET. The velocity of the electrons in the proposed model had considerably increased than the conventional MOSFETs by 14.63 % in the Au-Pt pair and 11.90 % in the Au-Au pair. The devices with the capability of higher electron mobility can be used in high-frequency device fabrication. This proposed work shows better performance in terms of electron mobility, conduction band profile, and transconductance. Hence it can be used in radio frequency applications and high precision equipment.