300W X-Band Solid State Power Amplifier using discrete GaN HEMT devices with waveguide interface

This paper presents the design, simulation and test results of 300W X-Band SSPA using GaN based High electron Mobility transistors (HEMTs) using quadrature power combining technique in balanced configuration for future space based Synthetic Aperture Radar (SAR) applications. This SSPA delivers more than 300W Peak RF Output Power at Centre frequency of 9600 MHz over a bandwidth of 600MHz (@14% duty cycle) with Power Gain more than 60dB.