Comparison of Reverse Conducting IGBT Concepts regarding Reverse-Recovery Behavior and Gate Drive Requirements

Reverse Conducting IGBT use n-shorts at the backside emitter to allow conduction of the body diode of the MOS structure. The p-well of the MOS cell acts as an anode of the diode. The anode efficiency strongly depends on the gate-emitter voltage. There are different concepts on how to deal with this behavior. This paper describes the influence on the static and dynamic diode behavior and the consequences for the gate drive.