Structure and Properties of Ti-B-C Films Deposited by DC Magnetron Sputtering of TiB2 and B4 C Targets

The films in Ti-B-C system have been deposited onto Si (100) substrates by dual direct current magnetron sputtering of TiB
2
and B
4
C targets. During deposition, the sputtering parameters at the TiB
2
target were unchanged, whereas sputtering current at the B
4
C target was varied in the range of 50-200 mA. The films were characterized in terms of their structure, composition, and mechanical properties. The X-ray diffraction measurements showed that all the films contain only TiB
2
crystalline phase of prominent (001) and (002) textures. The film hardness first increased reaching maximum value of about 53.5 GPa for films deposited with 100 mA B
4
C sputtering current, and then it decreased with increasing current. The coefficient of friction of films was unchanged with increasing the sputtering current at B
4
C target.