Electrical detection of terahertz radiation by silicon carbide nanostructure

The ability to detect the terahertz (THz) emission from a silicon nanosandwich structure (Si-NS) is demonstrated with the silicon carbide nanostructure (SiC-NS) as a detector. Electrical response in longitudinal voltage of the detector was observed under the constant drain-source current (I
ds(DET)
) of the detector.