Extremely high Q-factor terahertz metamaterial microfluidic sensor based on InN Strips

We propose an extremely high Q-factor terahertz metamaterial microfluidic sensor based on semiconductor materials. The unit cell consists of four layers: Au baseboard, dielectric and InN strips mixed layer, InN slab and a cover dielectric layer. Excellent sensing characteristics have been achieved with a high quality-factor (Q-factor) of 199.6 and an absorbance of 96.1% at 4.672 THz, the RI sensitivities reaches 1251GHz/RIU.