Stable terahertz in-situ photo-writable electrically-erasable memory with CsPbI3:Ag/SnO2/PEDOT:PSS hybrid structure

Stable terahertz photo-writable electrical-erasable memory from CsPbI3:Ag (Ag-nanoparticles added CsPbI
3
)/SnO
2
/PEDOT:PSS hybrid sample was investigated. Significant THz modulation depth of CsPbI
3
:Ag/PEDOT:PSS was obtained with low optical excitation intensity. After the insertion of a SnO2 film between the CsPbI3 and PEDOT:PSS, a 34% terahertz modulation depth was reached under optical excitation, and the recovery time of modulated THz transmission was considerably prolonged on removal of laser excitation. On applying a bias voltages to the CsPbI
3
:Ag/SnO
2
/PEDOT:PSS structure, THz transmission were quickly returned. THz transmissions were apply to be coded pixel units and were programmed to store image signal. Based on this, a stable photo-memory functionality was accomplished with the CsPbI
3
:Ag/SnO
2
/PEDOT:PSS composite sample using a method for in situ electrically-erasing information stored in both the spectrum and image.