A 25-31 GHz LNA in GaAs 0.15-μm pHEMT

This paper presents a 25-31 GHz LNA using 0.15-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The LNA exhibits a measured small signal gain of 11.3-14.3 dB from 22 to 34 GHz with S
11
<-5 dB and S
22
<-5 dB, and a measured noise Figure of 1.7 dB in average, with a 24-mW dc power consumption. The LNA occupies a chip area of 1×0.54 mm
²
including all RF and dc pads.