Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets

In this work, DC and low frequency noise measurements are performed on n-channel gate all around (GAA) vertically stacked silicon nanosheets (NS) at room and liquid nitrogen temperature. Principal static (DC) parameters such as low field mobility, access resistance and subthreshold swing are estimated. Preliminary low frequency noise studies reveal that the 1/f noise may be explained by the carrier number fluctuations mechanism at room and liquid nitrogen temperature operation.