Compact L-band High Performance Self-bias GaN Power Amplifier

This paper presents a compact high performance L-band GaN power amplifier. It uses a 3.6 mm gate width die for input and output matching. The circuit uses self-bias technology to realize single power supply. Finally, under the condition of 32V single power supply bias, 300 $\mu$s pulse width and 15% duty cycle, the output power of the amplifier is more than 20W, the gain is more than 15dB and the power additional efficiency(PAE) is more than 58% in the frequency band of 1.2 $\sim$ 1.4 GHz. The whole circuit is soldered in a 17.4mm $\times 24$ mm metal and ceramic package, which fully demonstrates the excellent performance of the self-bias L-band GaN power amplifier.