Evaluation of SiC-based MOSFET in Electronic Power Technology

The discovery of a new material is usually accompanied by breakthroughs and developments in many other fields. In order to quantitatively evaluate the improvement of electronic power technology by SiC, this paper selects the maximum working frequency as the physical quantity to evaluate the advanced degree of electronic power devices. Through theoretical analysis, an equation for estimating the maximum operating frequency of the circuit is derived. On the hardware platform, the validity of the formula is verified by the comparative experiments of control variables. At the end of the paper, the maximum working frequencies of SiC-based MOSFET and Si-based MOSFET are measured by experiments, and the improvement of electronic power technology by SiC is evaluated quantitatively.