Analysis of random dopant-induced effects through numerical solution of randomly perturbed nonlinear Poisson equation

A new approach to the analysis of random dopant-induced effects in semiconductor devices is proposed. This approach is based on numerical solution of randomly perturbed nonlinear Poisson equation by using a "small signal analysis" (perturbation) technique. This technique is computationally much more efficient than the existing "statistical" techniques and it yields the information that can be directly used for the design of dopant fluctuation-resistant structures of semiconductor devices.