ZnSxSe1–x Carrier-Selective Contacts for Silicon Photovoltaics

The wide bandgaps and superior conductivity of ZnS
x
Se
1–x
semiconductors to amorphous Si suggest an alternative carrier-selective contact in silicon heterojunction solar cells. Electron-selective ZnS
x
Se
1–x
front contacts on p-type c-Si solar cells are explored by simulating in Sentaurus TCAD a large design parameter space informed by experimentally determined optoelectronic properties. Comparable performance to experimental and simulated p-SHJ reference devices is shown, with a champion simulated device efficiency of 20.8%.