Temperature-Dependent Photovoltaic Performance of a SQIS device

There is no doubt that silicon-based solar cells provide continuous power to space vehicles, but exposure to high-energy particle irradiation and large temperature differences are two challenges. In this report, the temperature effects of the crystalline silicon-based solar cells are experimentally evaluated by the short-circuit current and open-circuit voltage at a scope of 10-300K. The test PV device is named as semiconductor – quasi – insulator - semiconductor (SQIS), which is fabricated by a direct sputtering deposition of ITO film on crystal Si substrate clad with reactive grown a-SiOx(In), an indium-contained hybrid oxide layer.