An Ultra Energy-Saving Metal/Insulator/Metal Structure for One Selector-One RRAM

In this work, an extremely simple structure for one selector (1S)-one random resistive access memory (1R) was presented with high performance and reduced energy consumption. With the comprehensive study of oxide-based selector characteristics with a universal model for interface-type threshold switching (TS) phenomena, the selector was successfully integrated with RRAM in a three-layer sandwich structure (V/ITO/TiN) with ultra-low switching voltage and current. The results show a promising design guideline of oxide-based selectors for storage-class memory (SCM) applications.