Record RF Performance (ft=180GHz and fmax=240GHz) of a FDSOI NMOS processed within a Low Thermal Budget for 3D Sequential Integration

Record RF Figure-Of-Merits (FoM) is highlighted for a 42nm NMOS transistor fully processed at Low Thermal Budget (LTB) (<500°C) needed for 3D Sequential Integration (3DSI). f
T
=180GHz & f
MAX
=240GHz are reported at V
DD
=0.9V; which is actually very similar to performance of reference Si MOSfets processed with a Hot Thermal Budget (HTB) (Fig. 15). This excellent result was possible thanks to a careful optimization of the LTB process after an advanced characterization and modeling of key technological parameters such as mobility, Gate-Capacitance and Gate resistance