22 nm Embedded STT-MRAM Macro with 10 ns Switching and >1014 Endurance for Last Level Cache Applications

We demonstrate high performance 22 nm embedded STT-MRAM with a distinct combination of 10 ns write speed and >10
¹⁴
endurance at chip level. This is achieved by developing a unique MTJ free layer that exhibits high H
k
, low moment and low damping, which dramatically reduced switching current at short pulse widths. We further show that this MTJ design meets data retention requirement of 10 years at 105°C.