Ultra-Low Power Robust 3bit/cell Hf0.5Zr0.5O2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology

Scaled ferroelectric FinFET devices were fabricated with post fin formation surface engineering (SE) to remove the line-edge roughness (LER) from the silicon surface by dry etching. This facilitated 3bit/cell operations in 10 nm Hf0.5Zr0.5O2 based ferroelectric FinFETs along with on-state current (I
ON
) to off-state current (I
OFF
) ratio of 10
⁶
, extrapolated 10-year retention and endurance above 10
¹¹
cycles. Further, we have evaluated its performance in all ferroelectric neural network, where ferroelectric FinFETs are used as synaptic devices or neurons for weight storage. Synaptic core built with optimized devices achieve software-comparable 97.91% inference accuracy on MNIST data and multi-layer perceptron network.