Evaluation of Radiation Hardness of Semiconductor Materials Against Alpha Particles for an API Detector

An Associated Particle Imaging (API) system consists of a high vacuum chamber where deuterium ions are accelerated on a tritium-loaded target, resulting in alpha particles and neutrons emitted back-to-back, the latter escaping the chamber and used, for example, for tomography of a high-Z sample. An accurate determination of the alpha position is crucial to determine the trajectory of the neutron. Existing API systems have several limitations which a semiconductor-based API detector placed inside the vacuum chamber should not present. The semiconductor material can be either silicon or diamond. In particular, large and fast signals are generated by the alpha interactions in these materials. A pixelated API detector will measure the time and hit position of the alphas produced in the reaction. However, during the lifetime of the generator, the semiconductor detector will be exposed to an intense flux of alpha particles that will degrade its performance over time. To assess the radiation hardness of silicon and diamond against the alpha particles, we exposed single diodes made of either of the two materials to a 5 MeV alpha flux generated by an
²⁴¹
Am radioactive source. During irradiation, the diodes were biased and mounted on current-sensitive preamplifier boards. We have therefore been able to measure insitu the evolution of the waveforms as the damage was accumulating in their substrates.