Experimental Demonstration of HfO2-based Ferroelectric FET with MoS2 Channel for High-Density and Low-Power Memory Application

In this study, we have experimentally demonstrated memory operation of a HfO
2
-based ferroelectric FET (FeFET) with MoS
2
channel and ZrO2 seed layer into HfZrO
2
gate insulator. Ultrathin MoS
2
channel FeFET showed the memory window of about 0.22V, the retention time was above 5000 seconds, and the endurance cycles were above 10
⁶
times, which indicates the applicability of the device for high-density memory such as 3D FeFET.