Silicon Single-Electron Transistor as a High-Frequency Rectifier

High-frequency rectifying characteristics of Si nanowire based single-electron transistor (SET) has been analyzed for frequency range from 300 kHz to 3 GHz. At the operation point with a cutoff frequency of ~346 MHz, flat frequency response was achieved till 300 MHz, and the reduced rectifying current continued to flow till 3 GHz. This continuation seems to be in accordance with the theoretical expectation.