Characterization of GNRFET Devices for Applications towards 5G Communication

The fifth generation (5G) wireless technology will provide the nation's future telecommunications network, featuring higher bandwidth and data rates with lower delay and power consumption. This shift facilitates the ultra-level of integration, for systems loaded with embedded sensors that are enabled by this technology. A few challenges remain regarding the standards to proper interfacing, security for cellular based services, and ability of portable devices to be employed in this technology. These challenges include high-speed amplifiers and signal processors. Millimeter wave communications with frequencies above 10 GHz for mobile networks may be required to meet the propagation quality demands of this technology. This paper proposes the Graphene Nano Ribbon Field Effect Transistor (GNRFET) device as a potential candidate that fits well in this technology, featuring high frequency amplifiers and high switching speed in digital circuits with ultra-low power consumption. These advantages may be attributed to the high mobility and mean free path of the device, leading to major ballistic carrier transport. The simulation was conducted at a switching speed in the order of 10GHz and 0.7V supply. The device was also employed for high frequency amplifiers, achieving as much as 5.1 THz gain bandwidth product (70GHz at a gain of 75), with very clean output signals. Near 115 dBs attenuation losses for harmonics was determined within the operating bandwidth. This paper details the device model, circuit design, and power consumption, suitable for the 5-G communication system. The nanoscale size of the device provides the ultra-level of integration, incorporating the embedded and IoT devices supporting this technology.