Comparative Analysis of Charge Carriers Effective Mass Energy Dependences in the Various Semiconductors under Conditions of Strength and Extra Strength Electric External Fields Action

In this work, on the basis of the kinetic equations of heating and drift of hot carriers in the bulks of multi-valley of the AIIIBV type semiconductors (by the example of gallium arsenide), some important relations were obtained. It characterize the behavior of the carriers effective mass for different representations of the dispersion dependencies of the of the effective mass energy dependencies. For this type of semiconductor, both relations of the dependence of the kinetic energy on the strength of the external field and other relations are obtained, and the concept of superstrong electric fields is introduced, at which the effective mass tends asymptotically to infinity. This critical regime can be realized in the indicated semiconductors when the strength of the threshold value of the electric field of the Gunn effect is approximately threshold. At the same time, these results are compared with the kinetic parameters of silicon-type semiconductors, which expands the scope of these semiconductors for the development of new devices.