Effect of RF Sputtering Power Density and Post Thermal Annealing Temperature on the Performance of Aluminium-Doped Zinc Oxide Thin-Film Transistor

A low production cost and non-toxic metal-oxide semiconductor, Al-doped zinc oxide (AZO), are used as a channel layer to fabricate AZO thin-film transistor. The effect of sputtering power density and post annealing temperature on the performance of AZO TFTs are respectively investigated. The AZO TFTs sputtered at 5.92 W/cm
²
and annealed at 200 °C show good device performance while the AZO TFTs sputtered at 4.44 W/cm
²
and annealed at 180 °C exhibit the good positive bias stress reliability.