Design of a 3.5 GHz Power Amplifier using Microstrip line Technology

This paper presents a 3.5 GHz microwave power amplifier. The proposed power amplifier design is based on single stage architecture. The microwave power amplifier consists of a GaN RF transistor QPD 1009 and fed with single power supply. The presented power amplifier (PA) is analyzed and optimized by using Advanced Design System (ADS) software. The design methodology is shown step by step in this paper along with relevant figures. From the simulated results it can be seen that the amplifier achieves a high power gain of 21 dB and input reflection coefficient(S
11
) of less than -13 dB. This amplifier provides good level of harmonic rejection which is presented in the results of harmonic balance controller. So it can be said that this power amplifier provides excellent performance for microwave applications.