Non-Linear Resistive Switching Characteristics in HFO2-Based RRAM with Low-Dimensional Material Engineered Interface

Resistive switching devices with inherent nonlinear characteristics have great advantages in high density integration. In this paper, we demonstrated non-linear resistive switching behavior through engineering the interfacial layer with the low-dimensional hexagonal boron nitride(h-BN). The h-BN interface can act as a joint barrier to restrict ion-migration and modulate the carrier conduction due to its low diffusion rates. The experimental results show that the h-BN engineered devices exhibit excellent nonlinear properties in the low-resistance state and incremental analog behavior compared with the control samples owing to the h-BN diffusion limiting layer. The conduction mechanisms of both devices are demonstrated through experiments and theoretical analysis.