Improvement of RRAM Uniformity and Analog Characteristics Through Localized Metal Doping

In this work, the influence of localized metal ion doping on the uniformity and analog behavior in TaOx-based RRAM is investigated. Experimental results show that Al ion local doping can improve the uniformity. The distributions of set/reset voltage and LRS/HRS become tighter. Moreover, the TaOx-based RRAM with Al doping shows excellent analog switching behaviors compared with the device without doping. The underlying mechanism may be explained by the reduced formation energy of oxygen vacancies and relayed traps in the doped area, which makes it easier to form incremental conductive filaments in the regions with high ion doping concentration.