Analysing Structural Asymmetry on the Nonmonotonic Electron Mobility of Pseudomorphic Heterojunction Field Effect Transistors

Nonlinearity in the mobility of electron can be determined in a GaAs/InxGa1-xAs double quantum well pseudomorphic Heterojunction Field Effect Transistor via asymmetry in the doping concentration along the substrate side. We observe a sudden fall in electron mobility near the resonance of subband energy states which affects subband electron mobilities governed by ir- scattering. The nonlinearity in μ increases with increase in difference in the well width and doping concentration.