Body Connection Assessment of MOS-Diodes for MOS-Quadrupler based RF Energy Harvesting Circuit

In this paper, we present a highly sensitive RF energy harvesting circuit which utilizes MOS-Quadrupler as rectifier and a passive series resonance circuit that acts as a voltage booster as well as a matching circuit. For rectification of RF signals, we have used MOS-diodes with body-drain connection instead of widely used body-source connected MOS-diode (conventional). The proposed circuit is designed and optimized for 900 MHz (ISM Band) frequency using standard 90 nm CMOS-technology. We achieved the power conversion efficiency (PCE) 36% @ - 30 dBm and 1V - sensitivity at - 25.6 dBm for 1 MΩ load. The achieved PCE is 39.5% higher than the conventional MOS-diode (body-source) rectifier at a remarkably low RF input power of - 30dBm (1 μW) due to reduction in leakage and enhancement of charging current.