Performance Improvement of Co-Sputtering AlGaZnO Solar-Blind Photodetectors

The author reported the AlGaZnO photodetector characteristics with various AGO:ZnO co-sputtering power ratio. It was found the optimized on/off ratio and responsivity were about
$3.64 \times 10^{5}$
and 0.15 A/W, respectively, at the 10 V applied bias, and with AGO:ZnO power ratio of 80 W:50 W. The UV to visible rejection ratio was
$8.08 \times 10^{3}$
, indicated the significant response under UV illumination. The on/off ratio and responsivity could further be improved to
$4.2 \times 10^{6}$
and 0.44 A/W, respectively, by annealed at 300°C for an hour, to decrease the defect in the AGZO film. Besides, the photoresponse of the AGZO photodetectors also showed a repeatable and stable switching characteristic. These results indicate the performance of AGZO photodetector were good, and can be a good candidate for low cost, fast fabricated solar-blind application.