Investigation on the Single-event Burnout and Hardening of the 500V SOI Lateral-IGBT

In this paper, we study the single-event burnout (SEB) tolerance of the 500V SOI Lateral-IGBT (SOI-LIGBT). An analytical model is brought up to inspect the failure procedure during SEB and reveal the SEB triggering criteria. TCAD simulations are performed to reveal the hardening strategy. It is found that the SEB triggering criteria are closely related to the latch-up caused by ionized carriers in the blocking state. Thus, the peak value of V
_be
in inherent parasitic NPN transistor can be used to inspect whether SEB occurs. SOI-LIGBT with trench gate (TG-LIGBT) and SOI-LIGBT with shallow p+ layer (SPL-LIGBT), are proposed to improve the device's SEB immunity by reducing peak V
_be
. It is verified by both analytical model and TCAD simulations that the SEB threshold voltage (VSEB) can be enhanced to 250V.