Novel Monolithic Integrated Device with Gate Resistor for External IGBT Clamping Leading to Enhanced Short Circuit Behavior

First results of an epitaxially grown suppressor diode with top side integrated NiCr-alloy metal film resistor exhibiting low temperature coefficient are shown. The device is intended to be mounted nearby an insulated gate bipolar transistor (IGBT) directly onto the same direct copper bonded substrate. It will be contacted using heavy aluminum wire bonds and includes a bidirectional diode as well as the corresponding IGBT gate resistor in one assembly. Using IGBTs without integrated gate resistors, the suppressor diode can limit its gate potential to safe operating conditions. This can be mandatory in cases where high currents, short-circuit faults, high inductances etc. occur.Diode’s breakdown voltage (clamping voltage) as well as the resistor value can be adjusted by design to fit diverse applications, e.g. Si or SiC.