Effect of Growth Temperature on the Characteristics of β-Ga203 Thin Films Grown on 4H-SiC (0001) Substrates by Low Pressure Chemical Vapor Deposition

Herein, we report on β-Ga
₂
O
₃
thin films grown on 4H-SiC (0001) substrates by Low pressure chemical vapor deposition (LPCVD). The influences of growth temperature on the crystal quality, optical properties, surface morphology of β-Ga
₂
O
₃
films were investigated using X-ray diffraction (XRD), Ultraviolet-Visible (UV-Vis) Scanning Spectrophotometer, Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). It was found that the surface morphology, grain size and strain of the β-Ga
₂
O
₃
thin films could obviously be influenced by the growth temperature in the range from 600 to 800°C. The XRD results indicate that β-Ga
₂
O
₃
thin films were preferentially along the (2̅01) oriented. At 750°C, it is found that the β-Ga
₂
O
₃
film with relatively high crystal quality. Geometrical epitaxial relationship between the β-Ga
₂
O
₃
(2̅01) film and 4H-SiC (0001) substrate is revealed as β-Ga
₂
O
₃
[0 1 0] || 4H-SiC [1 -1 0] and β-Ga
₂
O
₃
[1 0 2] || 4H-SiC [1 1 0]. The lattice mismatch along β-Ga
₂
O
₃
[0 1 0] and β-Ga
₂
O
₃
[1 0 2] direction are 0.98% and 6.5%, respectively.