Double-Layer Amorphous InGaZnO Thin Film Transistors with High Mobility and High Reliability

Recently, amorphous indium-gallium-zinc oxide (a-IGZO) is one of the promising candidates for next generation display due to high mobility (>10 cm 2 /V-s), low leakage current, and low processing temperature as compared to the conventional a-Si TFTs [1] . In low cost BCE (Back-Channel-Etch) process, which is favorable for manufacturing, efforts are needed to improve the performance degraded by S/D etching [2] - [5] . In this work, we take the advantages of the band discontinuity between the In-rich high mobility (HM) and the standard (STD) IGZO to fabricate the BCE type TFT with double layers.