First principles calculation of resistive random access memory based on multi-layer 2H phase molybdenum disulfide resistive layer

In this work, Ag/ MoS
2
/ Ti RRAM are studied by first principles calculations. First of all, metal/ MoS
2
interfaces are proposed. Then, the set process of Ag/ MoS
2
/ Ti device was simulated by molecular dynamics and the IV curve was calculated, which confirmed the switching characteristics. The switching ratio is over than 10
²
. This proves that the mechanism of Ag/ MoS
2
(2H phase)/ Ti RRAM is conductive filament mechanism, and there is a great potential to improve the switching ratio and other properties. The work of this paper has guiding significance for the design and optimization of Ag/ MoS
2
/ Ti RRAM.